Features of EVM 8GB (8GBx1) DDR3 1600MHz Desktop RAM

• Available Capacities: DDR3 8GB 1600MHz UDIMM
• VDD = VDDQ = 1.5V ±0.075V
• 1.35V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and
  mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode
  register set [MRS])
• CAS Latency(Nanosecond): 13.75
• Programmable CAS latency 9, 10 ,11 supported
• Programmable additive latency 0, CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 9, 10, 11
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• Average Refresh Cycle (Tcase of 0 °C to 95 °C)
  - 64ms, 8192 cycle refresh at 0°C to 85°C
  - 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration
• JEDEC standard 78ball FBGA(x4/x8)
• RoHS compliant

Specifications of EVM 8GB (8GBx1) DDR3 1600MHz Desktop RAM